Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product ...

A power tip that discusses how to address highly integrated USB PD charger design constraints with a self-biasing circuit.

The new parts, called the EP9 series and aimed at both IGBTs and mosfets, are built on a MnZn ferrite core with surface-mount L-pin construction. Creepage and clearance is 5mm, peak withstanding is ...