Abstract: In this article, we report enhancing RF performance by improving the thermal management of gallium nitride (GaN) Schottky barrier diodes (SBDs), demonstrated through the application of a ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Recently, a team from the University of Science and Technology of China (USTC), led by Haiding Sun, has demonstrated a ...

Gallium nitride (GaN), a third-generation semiconductor material, is widely used in devices such as chargers, 5G base stations, radar systems, military communications, and aerospace applications.

However, over the past year, I have undertaken extensive testing, evaluating close to 300 GaN (gallium nitride) chargers of varying sizes, power outputs, and manufacturers. Also: This portable ...

Contribute to mm28042804/market212 development by creating an account on GitHub.

GaN power devices have gained prominence in medium- and high-power applications due to their ability to operate at high frequencies while maintaining excellent efficiency. Deliver higher efficiency, ...