When you’re testing or debugging some mains-powered gear, plugging it directly into the outlet can often be an exciting ...
Abstract: In this article, we report a major breakthrough in the recovery performance of microwave high-power limiters achieved through the utilization of gallium nitride (GaN) Schottky barrier diode ...
This repository also contains a reusable velocity-driven mobility handler in src/velocity_mobility, used by the simulation to apply speed/acceleration limits to commanded velocities.
Abstract: In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled ...
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