RIR Power Electronics today announced the launch of its Silicon Carbide Merged-PiN Schottky diodes, marking a significant advancement in power device technology for next-generation electric vehicles, ...

Like many of us, [Tim]’s seen online videos of circuit sculptures containing illuminated LED filaments. Unlike most of us, however, he went a step further by using graph theory to design glowing ...

Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.

Atomic layer processing improves optical performance in SiC photonic devices, crucial for developing efficient quantum systems and integrated photonic circuits.

Diodes guide electricity in just one direction, preventing damage and making circuits work correctly. This video explains how ...

Molecular electronic devices using quantum tunneling could achieve integration densities 1,000 times greater than silicon chips by combining atomic-precision assembly with three-dimensional ...

Silicon carbide is for photonic circuits and quantum devices. Atomic layer processing boosts SiC waveguides and resonators, improving performance.

Abstract: The paper describes the planar Gunn diode, which is a device well suited to provide milli-metric and tera-hertz sources using microwave monolithic integrated circuit technologies. Different ...

† Institute of Physics and Applied Physics and ‡ Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea E-mail: [email protected]. Phone: 82-2-2123-2842. Fax: ...