Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

GaN power devices have gained prominence in medium- and high-power applications due to their ability to operate at high frequencies while maintaining excellent efficiency. Deliver higher efficiency, ...

Articles focused on active research areas, wherein an emphasis is placed on the relationship between the materials or interface synthesis, structure and/or properties and applications. We are pleased ...

Gallium nitride (GaN), a third-generation semiconductor material, is widely used in devices such as chargers, 5G base stations, radar systems, military communications, and aerospace applications.

State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China School of Applied Chemistry and Engineering, ...

Abstract: In this article, we report enhancing RF performance by improving the thermal management of gallium nitride (GaN) Schottky barrier diodes (SBDs), demonstrated through the application of a ...