Chinese scientists unveil the world’s smallest ferroelectric transistor with ultralow power and tiny gate for future AI chips ...

The new power system in package couples an updated BCD driver with a high-performance GaN power transistor that has just ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

Researchers at Peking University in China have developed the world’s smallest and most energy-efficient ...

Solid-state device technologies, which are available to the amplifier designer, fall, broadly, into three categories: bipolar junction transistors (BJTs) and junction diodes; junction field effect ...

Modern circuit design is a “mixed signal” endeavor thanks to the availability of sophisticated process technologies that make available bipolar and CMOS (Complementary Metal Oxide Semiconductor), ...

Engineering researchers have demonstrated a new transistor that switches at only 0.1 volts and reduces power dissipation by over 90 percent compared to state-of-the-art silicon transistors. One of the ...

The team from Peking University led by Qiu Chenguang, a senior researcher, and Peng Lianmao, an academician of the Chinese Academy of Sciences, has developed nano-gate ferroelectric transistors with ...

A monolithic GaN mains power converter IC was the target of Leibniz University Hannover, which worked with Texas Instruments. And the result is a 15W off-line PSU that can feed a 30-60V LED string ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...