This article explains the switching behavior of power MOSFETs in practical application circuits and shows the reader/designer how to choose the right device for the application using the ...
SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
Heat, power loss, and switching issues slow high-voltage systems. A 1200V silicon carbide platform can fix them. Here’s what makes it different.
"With great power comes great responsibility," says Spider-Man's wise Uncle Ben. Who knew he was really talking about electronic design, FETs, source nets, and switching frequencies? Power MOSFETs are ...
SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits (ICs) for energy-efficient power conversion, today announced the addition of two ...
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