Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

Electromagnetic waves with frequencies between microwave and infrared light, also known as terahertz radiation, are leveraged by many existing technologies, including various imaging tools and ...

SemiQ has created a line of 1,200V SiC mofet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...

This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

SemiQ has expanded its family of 1200V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer RDSon values of 7.4, 14.5, ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

6/3/2003 Single Die MOSFET and Schottky Barrier Diode for DC-DC Converters To meet the requirement for greater integration of devices and ever-smaller 6/3/2003 Single Die MOSFET and Schottky Barrier ...

(Nanowerk News) In preparation for the commencement of the true IoT era, energy harvesting technologies, which transform the minute sources of energy in the surrounding environment into electricity, ...