EDN

600-V GaN HEMT targets PFC off-line power supply

The promise of higher efficiency power conversion using GaN (Gallium Nitride) high electron mobility transistors (HEMT) has been achieved with devices now in volume production. This article will ...
EurekAlert!

Bidirectional 1200 V GaN switch with integrated free-wheeling diodes

Technological innovations in power electronics are not only essential for the success of the energy transition, they also provide sustainable support for economic development in Europe. The Fraunhofer ...
EDN

GaN RF switch delivers 20 W

Built on a wide-bandgap GaN HEMT process, Teledyne’s TDSW84230EP reflective SPDT switch covers 30 MHz to 5 GHz, handling 20 W of continuous power. It is intended to replace PIN diode-based RF switches ...
Electronic Design

Gravitate to These GaN Apps to Enhance Power Performance

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power design ...
Business Wire

Teledyne e2v HiRel and GaN Systems Unveil High Reliability 100V GaN Power HEMT

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is launching a new, ruggedized 100V/90A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems.
Compound Semiconductor

Scaling N-polar GaN HEMT on Si to 8-inch

At the same time, the semiconductor industry has been moving toward 200 mm (8-inch) wafers to improve manufacturing ...
Business Wire

Teledyne HiRel Semiconductors Releases High-Power RF GaN Switch (30 MHz to 5 GHz)

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP. This switch offers high peak power and ...
EurekAlert!

1200 V GaN HEMTs for the energy transition

Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...
Electronics Weekly

Integrated GaN half bridge switches 600V at 3MHz

“A switching frequency of up to 3MHz allows us to achieve a much greater power density,” said Fraunhofer research associate Richard Reiner. On the die is two 600V 120mΩ GaN HETS (high electron ...
Electronics Weekly

Half-bridge reference design allows IGBTs, GaN hemt, SiC mosfet and compound cascode switches to be compared

Power supply maker Recom has introduced a universal half-bridge development board and reference design. It is “a design that can be used to compare the real-life performance of various high power IGBT ...
Semiconductor Engineering

GaN ICs Wanted for Power, EV Markets

Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon ...