In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...

Advanced Micro Devices has created new high-performance transistors in its labs based on the simple concept that sometimes two are better than one. The chipmaker said Tuesday it has manufactured in ...

Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...